http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030081618-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb928303c40fe456b3b01a28de84e14 |
| publicationDate | 2003-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030081618-A |
| titleOfInvention | Fabrication method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and an object thereof is to prevent delamination due to the movement of impurities in an oxide film containing impurities, corrosion of a metal thin film, and deterioration of adhesion of metal materials. To this end, in the present invention, forming an impurity-containing oxide film on the semiconductor structure including the lower metal wiring; Depositing and planarizing an upper oxide film on the impurity containing oxide film; Selectively etching the upper oxide film and the impurity-containing oxide film to form vias to expose a portion of the lower metal wiring; Flowing at least one kind of hydrogen-containing gas over the entire surface of the structure including the via to form an impurity-free region having a relatively low impurity content in a predetermined region of the impurity-containing oxide film adjacent to the via; The step of filling the via with a metal material is sequentially performed to prevent the delamination of the metal wiring, the corrosion of the metal thin film, and the increase of the via resistance due to impurities. |
| priorityDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.