http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030081596-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3585c2c8585cde3ec77975d8d0d615d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a3618992eab9c031298c55b0e45443e |
| publicationDate | 2003-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030081596-A |
| titleOfInvention | STRUCTURE AND MANUFACTURING METHOD FOR MONOLITHICALLY INTEGRATED ENHANCEMENT/DEPLETION MODE (p-)HEMT DEVICES |
| abstract | Disclosed are the structure of a single integrated incremental and depletion mode (p-) HEMT device and a method of manufacturing the same. The structure of a single integrated increase and depletion mode (p-) HEMT device according to an embodiment of the present invention includes a channel layer not doped with impurities on the semi-insulating compound semiconductor substrate, and a barrier layer doped with impurities on the channel layer. A barrier between a source / drain ohmic layer of an increase mode and a depletion mode (p-) HEMT formed above the barrier layer, a source / drain electrode formed in contact with the source / drain ohmic layer, and a source / drain ohmic layer The gate electrode of the increase mode and the depletion mode (p-) HEMT formed in the space where the layer is exposed, and the impurity concentration reduction region in which hydrogen ions are implanted in the barrier layer corresponding to the lower portion of the gate electrode of the increase mode (p-) HEMT . In the present invention, since the impurity concentration in the barrier layer can be controlled by implanting hydrogen ions into the barrier layer (impurity reduction region) under the gate electrode of the increase mode (p-) HEMT and performing a heat treatment, the conventional increase mode (p-) HEMT The threshold voltage can be controlled more easily than the method of adjusting the threshold voltage by etching the thickness of the barrier layer of the device, thereby making the increase mode (p-) HEMT with uniform device characteristics. A single integrated circuit made of HEMT can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112614835-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112614835-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110072273-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8263449-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110072277-A |
| priorityDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID1038 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419590221 |
Total number of triples: 20.