http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030080849-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48e05ff43560ab9b01be5ed265bfff82 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_372bf4f3eadf40ab5bb95f362366a12e |
| publicationDate | 2003-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030080849-A |
| titleOfInvention | Method for manufacturing thin film transistor liquid crystal display device |
| abstract | The present invention relates to a method of manufacturing a thin film transistor liquid crystal display device, comprising the steps of: preparing a substrate; Forming an active layer, a gate oxide film, a gate, and a metal layer on an upper surface of the substrate; Continuously patterning a first passivation layer, a source / drain and a data line pad, and a second passivation layer on the substrate on which the structure is formed, and then forming a conductive layer on the second passivation layer; Applying an electric field between the data pad and the conductive layer; And selectively removing the conductive layer to form a pixel electrode, and do not require a separate electrode forming process, and a constant electric field is formed on the entire substrate by applying an electric field between the data line pad and the pixel electrode. The thin film transistor liquid crystal display device having the FALC polycrystalline silicon thin film transistor array exhibiting uniform device characteristics can be manufactured. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100802879-B1 |
| priorityDate | 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.