http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030080841-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C25-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_750f4c3487b4c0d8ec585f7afd1df11c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2905c27ff866b123a52dc8cb211382c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb4a138feff347c31e4705990b45a4e |
| publicationDate | 2003-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030080841-A |
| titleOfInvention | Test pattern and method of cmp process control using the same |
| abstract | An inspection pattern and a method of controlling a chemical mechanical polishing process using the same are provided. This inspection pattern is disposed on the monitoring region of the semiconductor substrate provided with the main region and the monitoring region. The inspection pattern is composed of a planar region and a pattern region. In the process control method using the inspection pattern, in order to apply the chemical mechanical polishing process to the semiconductor substrate having the inspection pattern and the main pattern, the correlation between the step difference of the inspection pattern and the etching thickness of the main pattern is first set, The chemical mechanical polishing process is applied for a predetermined time. The step difference of the inspection pattern is measured, and the etching thickness of the main pattern corresponding to the step difference of the inspection pattern is detected. The polishing time of the detected main pattern is compared with the reference value to correct the polishing time, and the corrected polishing time is applied to the subsequent lot or the subsequent substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100857661-B1 |
| priorityDate | 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 |
Total number of triples: 24.