http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030078563-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F17C2260-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F17C2260-044 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F17C13-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2002-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11a3a06c677d03a75aca3d611aa40bb6 |
| publicationDate | 2003-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030078563-A |
| titleOfInvention | Method for Post Etch Treatment using Ar aerosol |
| abstract | The present invention provides a post-etching method of a semiconductor device suitable for suppressing a problem in which a photoresist film remains or a recipe remains. The post-etching method therefor includes forming a photoresist pattern on a thin film on a wafer. Etching the thin film using a pattern as an etch mask, stripping the photoresist pattern, and cleaning using an argon aerosol, wherein the argon aerosol is generated by cooling argon to a cryogenic temperature of -253 ° C., Accelerated nitrogen is supplied at a rate of 10 l / min to 100 l / min to increase the collision energy of the argon aerosol. |
| priorityDate | 2002-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.