| abstract |
Trisilane is used for chemical vapor deposition which deposits a silicon-containing thin film on a mixed substrate. Such methods are useful in semiconductor fabrication and provide a variety of advantages, including uniform deposition on heterogeneous surfaces, higher deposition rates, and higher manufacturing productivity. One embodiment is in forming a base region of a heterojunction bipolar transistor, including simultaneous deposition on a single crystal semiconductor surface and an amorphous insulating region. |