| abstract |
The present invention relates to a chemical-mechanical polishing slurry composition which not only stabilizes hydrogen peroxide, which is a component of the slurry composition, but also has an excellent polishing rate for tantalum-based metal films, and includes an abrasive, an oxidizing agent, an organic acid, an abrasive inhibitor, a dispersion stabilizer, and a phosphoric acid compound. And it provides a chemical-mechanical polishing slurry composition comprising a pH adjuster. Such chemical-mechanical polishing slurry compositions are particularly useful for the process of removing tantalum-based metal films during the damascene process for forming copper interconnects. |