| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2002-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdbfda9b46ea1d5e06f71f87e2205aa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e57964d903c52dc1fddd325b5450aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8959b9d0e93998b0d8a779d71c223c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65cfc6ac8b5b60a46d72708f9036abd7 |
| publicationDate |
2003-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030068729-A |
| titleOfInvention |
Compositions for forming anti-reflective light absorbing layer and method for formimg patterns of semiconductor device using the same |
| abstract |
Disclosed are a composition suitable for producing an antireflection film in which development occurs simultaneously with a photoresist film in a post-exposure developing step during a photolithography process, and a method of forming a pattern of a semiconductor device using the same. The anti-reflective light absorption film forming composition according to the present invention includes a polymer having a (meth) acrylate repeating unit, a light absorbing group of a diazoquinone series chemically bonded to the repeating unit, A photoacid generator, a crosslinking agent that crosslinks the polymer by heat, and a crosslinking agent which is decrosslinked from the polymer crosslinked by an acid, and a catalyst for promoting a crosslinking reaction of the polymer. In the method for forming a pattern of a semiconductor device according to the present invention, an antireflection film is formed on a semiconductor substrate using the composition. The anti-reflection film is exposed together with the photoresist film to be developed and then developed at the same time as the photoresist film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040009384-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101308281-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101308191-B1 |
| priorityDate |
2002-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |