http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030067670-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2003-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20030067670-A |
titleOfInvention | Silicon oxide patterning using cvd photoresist |
abstract | Integrated circuits and CVD photoresist (eg, PPMS 202) are formed on a substrate (eg, silicon 200), patterned, and converted to silicon oxide (eg, PPMSO 204). . A high quality cap layer (eg, PECVD silicon oxide 212) may be formed on the low quality silicon oxide layer using a maskless etching process. A high quality silicon oxide layer (eg, silicon oxide 308) may be formed on the substrate prior to forming the CVD photoresist layer to provide a buffer to the underlying low quality silicon oxide. Since no etch selectivity is required for the photoresist layer, thinner photoresists can be used as compared to the prior art, allowing larger lithography process windows to increase the depth of focus and make the process more robust. . |
priorityDate | 2000-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.