http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030066105-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-077
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-08
filingDate 2002-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a2e5708c7129289eb60ccf8273ef439
publicationDate 2003-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030066105-A
titleOfInvention Piezoelectric switching device for high frequency
abstract Disclosed are a high-frequency piezoelectric switching element and a method for manufacturing the same, which can effectively perform a switching operation even under a low driving voltage and can minimize power loss by a mechanical contact. The high-frequency piezoelectric switching element may include a first electrode in contact with a substrate on which both sides are mounted, and a central electrode formed horizontally with respect to the substrate, a piezoelectric layer formed on the first electrode, and a second electrode formed on the piezoelectric layer. And a support layer formed on the second electrode. A piezoelectric switching element composed of a plurality of thin films can be implemented to efficiently operate under a low driving voltage. Since the support layer is disposed on a neutral axis line, stress generated between the thin films constituting the piezoelectric switching element can be minimized. Can be. In addition, it is possible to perform an accurate switching operation by driving the device of the cantilever structure in the direction opposite to the position of the support layer, and switching operation is performed in a state of minimizing insertion loss and power loss because it is opened and closed by a mechanical contact to the pad. can do.
priorityDate 2002-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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