http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030059970-A

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filingDate 2002-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030059970-A
titleOfInvention Organic bottom anti-reflective coating material for prevention of resist pattern collapse and patterning method using it
abstract The present invention relates to a composition of a lower layer of photoresist, that is, an organic anti-reflective coating, which is used to increase the uniformity of a pattern in an ultra-fine pattern formation process of a semiconductor. In addition, by providing a new base to the thermal acid generator to provide an organic anti-reflective coating composition that can overcome the cross-sectional pattern and pattern collapse phenomenon of the pattern, the organic anti-reflective coating composition according to the present invention has a unique wave effect (standing wave effect) Not only can be significantly reduced, but the pattern collapse of the photosensitive agent in the upper part of the organic anti-reflective coating layer can be remarkably improved.
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