| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-7008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61K31-675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K31-675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K31-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K31-7008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K31-704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61K31-513 |
| filingDate |
2001-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030059222-A |
| titleOfInvention |
Method for the production of low defect density silicon |
| abstract |
The present invention relates to a method of growing a single crystal silicon ingot comprising axially symmetric regions substantially free of coherent intrinsic point defects. The method comprises the steps of: (i) forming a region within a portion of the diameter where vacancy becomes the dominant intrinsic point defect, and (ii) silicon self- from the heated surface to the region reducing the concentration of vacancy in the region. Heating the sides of the ingot to a temperature above the temperature of the region to cause a thermally induced internal influx of interstitial atoms, and (iii) the time between the formation of the region and a decrease in the concentration of baconcies within the region. Maintaining the temperature of the region above a temperature T A at which agglomeration of bacon point defects into coagulation defects occurs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100788018-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7608145-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7125608-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101030073-B1 |
| priorityDate |
2000-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |