http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030057678-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2001-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_495b95e39a31bfc45c057da5c4afae44 |
| publicationDate | 2003-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030057678-A |
| titleOfInvention | Method for fabricating top electrode in Ferroelectric capacitor |
| abstract | The present invention relates to a method of manufacturing a ferroelectric capacitor having improved characteristics of a device by forming an upper electrode of a ferroelectric capacitor by an ECD method. The present invention provides a method for forming a lower electrode on a substrate; Forming a ferroelectric on the lower electrode; Forming a seed layer on the ferroelectric; Forming a first insulator having an opening on the seed layer that exposes a predetermined surface of the seed layer; Forming an upper electrode embedded in an opening of the insulator; And removing the insulator and the seed layer between the upper electrodes. |
| priorityDate | 2001-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.