http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030056879-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd8a545bdb7961b362c140436fd03096 |
| publicationDate | 2003-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030056879-A |
| titleOfInvention | Method for forming interconnect structures of semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring of a semiconductor device that can improve the reliability by improving the buried characteristics of the metal wiring, comprising the steps of: forming a contact hole and an upper metal wiring trench in an insulating film on the lower metal wiring; Sequentially forming a barrier metal layer and a metal seed layer on the front surface thereof; And filling a metal material in the contact hole and the trench using an aqueous metal solution that precipitates the metal material by temperature change. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100613381-B1 |
| priorityDate | 2001-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.