http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030056156-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_878f9c9f88073e75cc25a7a0e4773dc1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fb928303c40fe456b3b01a28de84e14 |
| publicationDate | 2003-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030056156-A |
| titleOfInvention | Fabrication method of semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, and an object thereof is to prevent hydrogen from penetrating into a silicon wafer in a lower insulating film during deposition of a BPSG film, which is a metal insulating film of a semiconductor device. To this end, the present invention comprises the steps of forming a semiconductor device including a gate, a source, a drain in the device region of the silicon wafer defined device isolation region; Depositing a lower insulating film on the entire upper surface of the silicon wafer including the semiconductor device using nitrogen gas and SiH 4 gas by a general plasma method or a high density plasma method; Depositing a BPSG film on the upper front surface of the lower insulating film with a metal pre-insulating film; By selectively etching the BPSG film and the lower insulating film to form a contact hole so that a part of the gate is exposed, the lower insulating film of the BPSG film is made of an insulating film containing no hydrogen. |
| priorityDate | 2001-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.