http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030054178-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3b745ed8b05a0b7931fc4e8175ee451 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb7321a208bcd3ec048f9f9c33780c2b |
| publicationDate | 2003-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030054178-A |
| titleOfInvention | A method for froming barrier metal layer of semiconductor device |
| abstract | The present invention relates to a method for forming a barrier metal layer of a semiconductor device having excellent barrier properties to copper wiring, the method comprising the steps of selectively forming a first metal wiring on the semiconductor substrate, and the first insulating film and the second insulating film on the resultant Forming a trench by etching a predetermined portion of the second insulating layer to a predetermined depth, and selectively forming the via hole by selectively etching the first and second insulating layers to expose the first metal wiring in the trench. And forming a Ta thin film, a Cu—Rd thin film, and a second metal wiring in sequence on the resultant product. |
| priorityDate | 2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.