http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030052628-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2001-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_495b95e39a31bfc45c057da5c4afae44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54d39a2165e25525288035f5bf280cc3 |
| publicationDate | 2003-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030052628-A |
| titleOfInvention | Method of fabricating capacitor in ferroelectric semiconductor memory device |
| abstract | The present invention relates to a method for manufacturing a capacitor of a ferroelectric memory device, and in particular, to form an additional upper electrode in a capacitor of a stack structure to facilitate the etching process for the isolation of the upper electrode. Forming a; Forming a ferroelectric on the entire surface of the substrate including the lower electrode; Forming an upper electrode having a uniform thickness on the ferroelectric; Forming an additional upper electrode on the upper electrode; And etching the additional upper electrode in front to isolate the upper electrode. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8039829-B2 |
| priorityDate | 2001-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25199601 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452010600 |
Total number of triples: 18.