http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030050062-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4bfc4acb331b232e6bb22bcfb7f4d39 |
| publicationDate | 2003-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030050062-A |
| titleOfInvention | METHOD FOR FORMING Cu WIRING OF SENICONDUCTOR DEVICE |
| abstract | The present invention discloses a method for forming a copper wiring that can improve wiring reliability, and the disclosed method includes forming an insulating film to cover the underlying layer on a semiconductor substrate on which a predetermined underlying layer is formed; Etching the insulating layer to form trenches having different widths; Sequentially depositing a barrier film and a copper seed film on the trench surface and the insulating film; Depositing a first copper film until a trench having a relatively small width is buried according to an electroplating method using the copper seed film; Depositing a second copper film containing an impurity according to a sputtering method so that a trench having a relatively large width is buried on the first copper film; Heat-treating the resultant material so that impurities in the second copper film are diffused into the first copper film; And polishing the second and first copper films and the barrier film until the insulating film is exposed. Here, the barrier film and the copper seed film are deposited in a thickness of 100 to 1,000 mW and 250 to 2,500 mW according to the CVD method. In addition, any one of Mg, B, Al, Zn, and Ge may be used as the impurity, and the second copper layer may be formed by using a copper-target containing impurity or by using a Co-sputtering method. It deposits so that content may be 0.1 to 30%. In addition, the heat treatment is carried out at a temperature of 100 ~ 500 ℃ using a furnace or rapid heat treatment equipment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269629-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100701673-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100871368-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100866110-B1 |
| priorityDate | 2001-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 |
Total number of triples: 19.