http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030049366-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5081169b8c991da399d70ac59c69101 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 |
| filingDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8f6f3863a6cfd60111a42957dde4f7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75cc86ef19e822b2c1cef045bcb3628e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23a6829daf7a405482960d583baaa5e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc13cc394cdfde91a529aeb299693bb8 |
| publicationDate | 2003-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030049366-A |
| titleOfInvention | Manufacturing method of single crystal silicon ingot |
| abstract | In the production of a single crystal silicon ingot by the Czochralski method, the present invention predicts the point defect distribution present in an ingot in advance, and predicts the optimum temperature distribution of the ingot according to a predetermined analysis program. The present invention relates to a method for producing a single crystal silicon ingot capable of presenting zone structures and manufacturing process conditions. The method according to the present invention predicts the point defect behavior of an ingot through a predetermined temperature distribution modeling, and has a predetermined sensitivity so as to have a predetermined sensitivity. Is the equation Minimum value determined by Selecting 2 min; Ingot at 2 min Wow Analyzing, from the distribution, the temperature distribution of the ingot through a predetermined analysis program; Determining a hot zone structure and a manufacturing process condition of the crystal growth apparatus corresponding to the temperature distribution analysis through a predetermined application program; And growing a single crystal silicon ingot in a predetermined crystal growth apparatus having a hot zone structure determined in accordance with the determined manufacturing process conditions, wherein the failure cost for the production of low or no defect single crystal silicon ingot is reduced, and The cost is reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100488902-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101638486-B1 |
| priorityDate | 2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.