| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a68ee883a7f97f6d7970ab799596fad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e48c8c534a1e6489153e2883cb7a3f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf30c40a58d3e69d910b0eb465bfe4df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d48a72790c2e1138e898e7d33648351d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83dc09f6b0f9f8d9128f41ab98072e1c |
| publicationDate |
2003-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030049159-A |
| titleOfInvention |
Method for fabricating semiconductor device |
| abstract |
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to provide a method for manufacturing a semiconductor device suitable for obtaining a good etching profile when forming a contact. step; Sequentially forming an insulating film for a spacer of an nitride film series and an etch stop film along the entire profile where the conductive pattern is formed; Forming a flowable insulating film on the etch stop film; Selectively etching the flowable insulating film to expose the etch stop layer between the conductive patterns; And selectively etching the etch stop layer and the spacer insulating layer to form a contact hole exposing the surface of the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100459724-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100908828-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100780607-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589006-B2 |
| priorityDate |
2001-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |