| abstract |
The present invention provides a thermally conductive silicone composition and a cured product having excellent heat dissipation performance, a method of laying the composition between an IC package and a heat dissipating body, and the like, and a heat dissipation structure of a semiconductor device having excellent heat dissipation.n n n Component (A): 100 parts by weight of an organopolysiloxane having at least two alkenyl groups in one molecule and having a viscosity of 10 to 100,000 mm 2 / s at 25 ° C,n n n Component (B): organohydrogenpolysiloxane having two or more hydrogen atoms bonded directly to silicon atoms in one molecule, {the total number of hydrogen atoms directly bonded to silicon atoms} / {the total number of alkenyl groups of component (A) } Is from 0.5 to 5.0,n n n Component (C): low melting point metal powder having a melting temperature of 40 to 250 ° C. and an average particle diameter of 0.1 to 100 μm, andn n n Component (D): A high thermal conductivity filler having an average particle diameter of 0.1 to 100 µm has a total amount of component (C) and component (D) of 800 to 2,200 parts by weight, and (C) / ((C) + (D)) of 0.05 An amount from 0 to 0.9,n n n Component (E): a catalyst selected from the group consisting of platinum and platinum compounds, an amount of from 0.1 to 500 ppm relative to component (A) as platinum atoms, andn n n Component (F): A thermally conductive silicone composition comprising 0.001 to 5 parts by weight of a control agent that inhibits the catalytic activity of component (E) and having a viscosity of 10 to 1, OOOPa · s before curing at 25 ° C., the method of laying the same And a heat radiation structure of a semiconductor device using the same, and a cured product obtained by heating the composition in two stages. |