http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030047337-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2001-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f869400053f99a033390946335207aff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f46e02029b401606d43d4e331a36f30b |
| publicationDate | 2003-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030047337-A |
| titleOfInvention | Method for forming high dielectric thin film using atomic layer deposition |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technology, and more particularly, to a method of forming a high dielectric thin film using monoatomic deposition, and a high dielectric thin film of a semiconductor device capable of preventing contamination of a thin film by H 2 O vapor used as an oxygen source. The purpose is to provide a formation method. The present invention proposes a method for excluding H 2 O vapor used as an oxygen source in depositing high dielectric thin films such as STO, BTO, SBT by monoatomic layer deposition. That is, in the present invention, by removing a ligand other than oxygen bound to the center metal (Sr or Ba) through a reduction reaction using ammonia gas to obtain an oxide of the center metal, the reduction reaction by plasma of H 2 gas and Oxidation reaction of the center metal at lower temperature through oxidation reaction by plasma of O 2 gas, ozone (O 3 ) gas which provides oxygen in atomic unit with excellent reaction force, plasma of N 2 O gas, O 2 The present invention proposes a method of removing C and H bonded to a central metal by a combustion reaction using a plasma of a gas and oxidizing the central metal to obtain an oxide. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7521331-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7250379-B2 |
| priorityDate | 2001-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.