http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030044396-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2001-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2526ed8219853beddfe634db05edffac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ea82912a579f2a4386df5e04540854e |
| publicationDate | 2003-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030044396-A |
| titleOfInvention | Method for forming epitaxil layer |
| abstract | The present invention relates to a method of forming an epitaxial thin film to suppress the lateral growth of the epitaxial thin film during selective epitaxial growth, and the present invention for charging the silicon substrate into the reactor, and the reactor body and Introducing a raw material gas containing silicon (or germanium) to selectively epitaxially grow a silicon (or silicon germanium) thin film on the silicon substrate, and adding an impurity gas containing a Group 5 element into the reactor do. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103377870-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10883173-B2 |
| priorityDate | 2001-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.