| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2002-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2c585e330a7f6566bceb9003f14a0fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d5e306e3a1c726bbfc296cb73c0c6e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdae04bfabbd9eac0c42cb4f0bfb9f94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc0d0051ac4ba4b3b22a70335b147802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_043352a294c17bd65f7780d8c6ceab92 |
| publicationDate |
2003-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030043737-A |
| titleOfInvention |
Substrate apparatus and producting method |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a manufacturing method, and an object of the present invention is to provide a highly reliable semiconductor device having excellent transistor characteristics in a semiconductor device having an electric circuit using a transistor in which the characteristics of the plurality of field effect transistors are preferably the same. To provide.n n n By making the groove widths of the shallow groove element isolation adjacent to the active forming the transistors having the same characteristics desirable, the transistors have the same stress, so that the stresses generated in the active due to the adjacent shallow groove element isolation become the same. There is an effect that a transistor can be obtained. |
| priorityDate |
2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |