http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030043724-A

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filingDate 2002-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030043724-A
titleOfInvention Method of manufacturing semiconductor device
abstract Forming a first interlayer insulating film 6 and a second interlayer insulating film 4 made of a low dielectric constant film on the substrate; Forming a via hole (9) using a first resist pattern (1a) formed on said second interlayer insulating film; Performing an organic peeling treatment using an organic peeling liquid containing an amine component; And forming a second resist pattern 1b on the second interlayer insulating film, after the wet treatment, a second matte coating 2b to be positioned below the second resist pattern. ), At least one of annealing treatment, plasma treatment, UV treatment, and organic solvent treatment is performed to remove the amine component that inhibits the catalysis of acid generated in the resist during exposure, thereby forming the second resist pattern. The resolution of (1b) is prevented from falling.
priorityDate 2001-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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