| abstract |
A photosensitive polymer which can be used for ArF (193 nm) and F 2 (157 nm) excimer lasers and contains fluorine and a chemically amplified negative resist composition comprising the same are disclosed. The negative resist composition according to the present invention comprises (a) a photosensitive polymer comprising repeating units of the following structure, (b) a crosslinker, and (c) a photoacid generator (PAG).n n n n n n n n In formula, R < 1> is a hydrogen atom, a methyl group, or a trifluoromethyl group, n is an integer of 1-7. |