| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2001-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030017565-A |
| titleOfInvention |
Formation of boride barrier layers using chemisorption techniques |
| abstract |
The present invention discloses a method of forming a boride layer for integrated circuit fabrication. In one embodiment, the boride layer is formed by chemisorbing a boride-containing compound 305 and one high melting point metal compound 307 onto a substrate. In an alternative embodiment, the boride layer has a mixing structure. The mixed boride layer structure 409 includes two or more high melting point metals M 1 and M 2 . The mixed boride layer is formed by successive chemisorption of boron compound 405 and two or more single layers of high melting point metal compound onto the substrate. |
| priorityDate |
2000-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |