| abstract |
Providing a polishing composition which can polish the tungsten film and the insulating film at the same polishing rate, and as a result have good flatness, no polishing defects, and can create a polishing surface which is not contaminated by impurities such as iron ions. and,n n n A polishing composition for polishing a semiconductor device comprising at least a tungsten film and an insulating film comprising (a) silicon dioxide, (b) a periodic acid, (c) a pH adjuster, and (d) water, and a polishing method using the same to be. This polishing composition is suitable for finish polishing of a semiconductor device. |