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filingDate 2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b0150e86ff953408524513505458e9a
publicationDate 2003-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030014123-A
titleOfInvention Fabrication method of semiconductor integrated circuit device
abstract An object of the present invention is to improve the throughput of the CMP post-cleaning process.n n n According to the present invention, in the CMP post-cleaning apparatus, two or more drying chambers are formed at the rear end of the washing treatment chamber so that the drying treatment can be performed in parallel.
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priorityDate 2001-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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