http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030012357-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbffa3b81b3b862dc7220b5648f5f745
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-0883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-62
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-08
filingDate 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fe3c139bbfa11279e1c34e4a2788d44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ea242535606d26ae4dc169fc2fb7086
publicationDate 2003-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20030012357-A
titleOfInvention Single-Source Precursors for 13 Group-Nitride Quantum Dot, Process for Preparing Them and Process for Preparing 13 Group-Nitride Quantum Dot Employing Them
abstract The present invention relates to a single precursor for producing a nitride quantum dot of the Group 13 element, a method for producing the same, and a method for producing a nitride quantum dot of the Group 13 element using the same. More specifically, the present invention provides a single precursor for preparing a nitride quantum dot of a Group 13 element, wherein the Group 13 element is combined with azide and silylamine as a nitrogen source, and a Group 13 element. The present invention provides a method for producing an electric single precursor from chloride and an organic base, and a method for producing nitride quantum dots of group 13 elements by pyrolyzing the precursor. Since the single precursor of the present invention simultaneously holds the source of the Group 13 element and the source of nitrogen in one material, there is no need to adjust the equivalents of the two elements separately, and the single precursor of the present invention is decomposed by heat. In this case, since the by-product formed with the bonding center of group 13 element-nitrogen is a volatile material, it can be easily removed after pyrolysis. In addition, since the single precursor of the present invention does not have a Group 13 element-carbon bond, carbon contamination can be minimized when quantum dots are formed. In addition, according to the present invention, since the nitride quantum dots of the Group 13 elements can be manufactured by a chemical method in solution, it is possible to produce a large amount of nitride quantum dots at a low temperature as compared with the conventional method.
priorityDate 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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