| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2001-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2003-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20030007804-A |
| titleOfInvention |
Process for forming doped epitaxial silicon on a silicon substrate |
| abstract |
A method of forming doped epitaxial silicon on a silicon substrate. Doped amorphous silicon is deposited on the silicon substrate and annealed to form doped epitaxial crystal silicon. Crystal epitaxial silicon doped in device openings with very high aspect ratios can be grown at very low temperatures. Doped epitaxial silicon can replace polycrystalline silicon with monocrystalline silicon, in part or in whole, while drastically reducing contact resistance. This process can also be used to fabricate elevated source-drain MOSFETs. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7714394-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100882930-B1 |
| priorityDate |
2000-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |