| abstract |
The MOS transistor gate insulating film according to the present invention is characterized in that Dy is doped in a hafnium oxide film. Here, the doping amount of Dy is preferably 1 to 20 atomic%, and the Dy-doped hafnium oxide film may be formed by atomic deposition, chemical vapor deposition, reactive sputtering, or the like. When the Dy-doped hafnium oxide film is used as the gate insulating film, the gate insulating film having an effective thickness suitable for the next generation and having a very low leakage current can be obtained. |