http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030003329-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2001-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c4f22ffe1465950fe6f1ddd8d080bd |
| publicationDate | 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030003329-A |
| titleOfInvention | Chemical vapor deposition method for depositing ruthenium |
| abstract | The present invention relates to a chemical vapor deposition method of a ruthenium thin film having a high nucleation density and excellent morphology characteristics. 1st step which is made into ml / min-0.5ml / min, the flow rate of the said oxygen gas is 200sccm-1000sccm, under the pressure conditions of 0.5torr-5torr, and the flow rate of the ruthenium source 0.05ml / min-0.5 The second step is made into ml / min, the flow rate of oxygen gas is set to 20 sccm to 400 sccm, and is made under pressure conditions of 0.5 tor to 5 tor. |
| priorityDate | 2001-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.