http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030000274-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4be951e117b7194cc333f6bed6b82ee2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c96e452167568c2995f362c1c368848 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2001-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1dd397e7b5e9fe82b4f45fad3094a04 |
| publicationDate | 2003-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20030000274-A |
| titleOfInvention | Multichannel spectrum analyzer for real time plasma monitoring and thin film analysis in semiconductor manufacturing process |
| abstract | The present invention relates to a spectroscopic analyzer for analyzing a thin film from the emission spectrum of the plasma measured when the thin film is peeled off using plasma in the semiconductor manufacturing process and the optical interference spectrum obtained by reflecting light of various wavelengths onto the wafer surface. Is to determine the end point of the thin film removal process by measuring the optical emission spectrum of chemical species generated when the thin film is peeled off using plasma, and reflects the light reflected by reflecting light with various wavelength ranges on the surface of the wafer. The present invention relates to a spectrometer that can measure the thickness change of a thin film in real time from an interference spectrum.n n n To this end, in the present invention, the light having a broad wavelength range is reflected on the surface of the wafer through a double optical fiber on the upper surface of the plasma generating apparatus, and a reflection spectrum of the wafer is measured at various wavelength ranges by a high-speed spectrometer, and the reflected light is also measured. A separate optical fiber was installed in the direction perpendicular to the optical device to measure the emission spectrum of the plasma by a separate high speed spectrometer. Accordingly, the spectroscopic analyzer according to the present invention analyzes the thickness of the thin film when the thin film is removed by plasma in the semiconductor manufacturing process, and simultaneously analyzes the degree of etching of the thin film and the composition of the compound generated during the plasma etching in real time. Can be predicted. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1647049-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101247540-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488875-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8304264-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009111156-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009111156-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018182967-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10978278-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101389556-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100764916-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100819313-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100426988-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8009938-B2 |
| priorityDate | 2001-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.