| abstract |
Conventionally, the semiconductor device which employ | adopted the flexible sheet which has a conductive pattern as a support substrate, mounts a semiconductor element on this, and molds the whole is developed. In this case, there arises a problem that the multilayer wiring structure cannot be formed or a problem that the warpage of the insulating resin sheet in the manufacturing process becomes remarkable. The conductive plating film 4 is formed after the through hole 21 is formed in the insulating resin 2 using the insulating resin sheet 1 coated on one surface of the conductive film 3 with the insulating resin 2. Therefore, the multilayer wiring structure is realized by the first conductive wiring layer 5 formed by etching the conductive plating film 4 and the second conductive wiring layer 6 connected in multiple layers. In addition, the semiconductor element 7 is fixed on the overcoating resin 8 covering the first conductive wiring layer 5, whereby the first conductive wiring layer 5 becomes a fine pattern, and the wiring is free. In addition, since the thick conductive film 3 is etched thinly after the mold, the second conductive wiring layer 6 can also be fine-patterned. |