| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa67eb74ea5b96d9f8f2cfdb3b025770 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A63B2102-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A63B47-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A63B69-36 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A63B57-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2002-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad634a666594bbf34e2a922c097fce98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c944745453f40a5730c485697546150f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e70f44484365696c82882d8171002b40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04d8ce1abe16d859ea9161088ebbd61e |
| publicationDate |
2002-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020096963-A |
| titleOfInvention |
Methods for forming low-k dielectric films |
| abstract |
The present invention relates to a method for forming an extremely low dielectric constant (k) dielectric film on a semiconductor or integrated circuit surface using a polyhedral oligoometric silsesquioxane compound and a crosslinking agent. The reaction between the polyhedral oligometric silsesquioxane and the crosslinking agent is carried out in a chemical vapor deposition chamber. |
| priorityDate |
2001-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |