| abstract |
The present invention relates to a low-dielectric material which is indispensable for an electric device such as a high-density, high-performance next-generation semiconductor device. More particularly, the present invention relates to a process for producing a low dielectric organosilicate polymer which is a hydrolytic condensate of an oligomer containing a carbon bridge, A method of manufacturing an insulating film manufactured using a silicate polymer, and an electric device including an insulating film manufactured by the manufacturing method.n n n To this end, the present invention produces bridged organosilane oligomers from organometallic silane compounds and from them organosilicate polymers. Also disclosed is a composition for forming an insulating film containing such an organosilicate polymer and a method for producing an interlayer insulating film of a semiconductor device containing the organosilicate polymer provided from the composition.n n n The organosilicate polymer produced by the production method of the present invention is thermally stable, has good film-forming properties, is excellent in mechanical strength and crack resistance, and the film obtained by applying it to an insulating film has excellent insulating properties, The crack resistance of the coating film, and the surface strength of the coating film. |