http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020093901-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate | 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020093901-A |
| titleOfInvention | Method of forming vias in silicon carbide and resulting devices and circuits |
| abstract | Disclosed are a method of fabricating an integrated circuit on a silicon carbide substrate that does not have wiring bonds that can cause undesirable inductance. The method includes fabricating a semiconductor device on a first side of a silicon carbide substrate having at least one metal contact for the device. The opposing second side of the substrate is polished and polished until it is substantially transparent. The polished second side of the silicon carbide substrate is then masked to define a predetermined location for the via opposite the metal contact on the first side. The etch is etched through the masked position to form vias until the etch reaches the metal contacts on the first face. The via is metallized to form an electrical contact from the second side of the substrate to the device and the metal contacts on the first side of the substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101156837-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100763670-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7888713-B2 |
| priorityDate | 2000-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.