http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020092731-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11347f77f817d90392121ff34ff9a49c |
| publicationDate | 2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020092731-A |
| titleOfInvention | Method for forming metal line using the dual damascene process |
| abstract | The present invention relates to a method for forming a metal wiring using a dual damascene process to etch the seed metal layer prior to forming the plug to improve plug embedding and electrical characteristics. Forming and selectively patterning an insulating layer to define a plug formation region and an upper metal wiring formation region; Forming a barrier metal layer and a seed metal layer on a front surface; removing an overhang generated in an upper region of a plug formation region by removing a portion of the seed metal layer; forming a wire to fill the plug formation region and the upper metal wiring formation region Forming and planarizing the material layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100791078-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101034147-B1 |
| priorityDate | 2001-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.