| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F1-565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F1-325 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F3-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F1-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G05F1-565 |
| filingDate |
2002-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ebcf25d89033b5efaeedcb2b31b10f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba4c94289eef43ed8cb21c196bbc6f40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_731b65b7527aabbc1efeec43b5993f1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05df7b2d5bc66b08d06d4698cdc80ea2 |
| publicationDate |
2002-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020091769-A |
| titleOfInvention |
A Circuit For Generating Reference Voltage And An IP Core Equipped With The Circuit |
| abstract |
An object of the present invention is to provide a reference voltage generator circuit that operates with a sub 1V power supply voltage. As a means for solving the above problem, a change in the ambient temperature of the forward voltage of a certain Schottky diode is compensated with the forward voltage difference between the plurality of Schottky diodes among the plurality of Schottky diodes to output a reference voltage. In the Schottky diode, the semiconductor region constituting the Schottky interface is formed by the same process as the N well region constituting the channel region of the PMOS transistor, or the P well region constituting the channel region of the NMOS transistor, and constitutes the Schottky interface. The metal region is formed by the same process as the silicide region constituting the contact region of the MOS transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101143446-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8350618-B2 |
| priorityDate |
2001-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |