| abstract |
High quality epitaxial layers of synthetic semiconductor material may be grown to be placed on a large silicon wafer by first growing the receiving buffer layer 24 on the silicon wafer 22. The receiving buffer layer is a layer of single crystal oxide spaced apart from the silicon wafer by an amorphous interface layer 28 of silicon oxide. The amorphous interface layer eliminates strain and allows high quality single crystal oxide growth to accommodate the buffer layer. The process includes the formation of template layers 28, 30 and buffer layer 32. It is particularly suitable for the integration of compound semiconductors and Si SMOS devices. |