| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f50f95c17e4934fb9f9810574cdf87aa |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2002-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e59e953227221e9a87ff7f21c4307efa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55fb12f266133a1d81bc8ff966564662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aea4c9bec5a6aa436398f1a7a09b0126 |
| publicationDate |
2002-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020086252-A |
| titleOfInvention |
Method of forming low dielectric constant insulation film for semiconductor device |
| abstract |
A method of forming a thin film having a low dielectric constant by a plasma reaction on a semiconductor substrate includes: (i) introducing a reaction gas into a reaction chamber for plasma CVD processing in which a semiconductor substrate is disposed on a lower stage; And (ii) forming a thin film by plasma reaction on the substrate while reducing or discharging the charge from the substrate surface. An upper region for plasma excitation and a lower region for forming a film on the substrate are formed in the reaction chamber. An intermediate electrode is used to partition the inside of the reaction chamber into the upper region and the lower region. The discharge may also be carried out by lowering the temperature of the lower stage to condense moisture molecules on the substrate surface, in particular by using a cooling plate disposed between the intermediate electrode and the lower stage. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101148431-B1 |
| priorityDate |
2001-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |