http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020085260-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2001-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39774e7babf9a907ef820de0cacae072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99198d233712e594ab3c444275696b4f |
| publicationDate | 2002-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020085260-A |
| titleOfInvention | Echant for amorphous indium-thin-oxide |
| abstract | The present invention relates to an amorphous indium thin oxide etching solution, a conventional solution of the amorphous indium thin oxide etching solution of HCl and HNO 3 by etching the Mo or Mo alloy source and drain through the pinhole generated in the passivation film, Degrading the properties, Oxalic Acid has a problem that shorten the life of the equipment by the precipitation of C 2 H 2 O 4 or cause a process failure. In view of the above problems, the present invention includes forming a gate electrode on an upper portion of a glass substrate, and forming a gate insulating film and an active region on the upper surface of the gate electrode and the glass substrate; Depositing and patterning Mo on the upper surface of the structure to form a source and a drain, and then depositing a passivation film on the upper surface of the structure, and then forming a contact hole in the passivation film to expose a portion of the upper portion of the drain. Wow; A-ITO (AMORPHOUS INDIUM THIN OXIDE) electrode is deposited on the upper surface of the structure and patterned through a photolithography process using a mixture of dilute HCl and CH 3 COOH as an etching solution to form an a-ITO electrode. Even when the pinhole is formed in the passivation film, which is a base film, the source and the drain are not etched, and when applied to a thin film transistor display device, the deterioration of characteristics is prevented. By preventing this from being precipitated, there is an effect of preventing abnormality from occurring in the equipment by the precipitate, thereby improving productivity and improving the reliability of the process. |
| priorityDate | 2001-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.