http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020084376-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F120-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F214-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F210-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-22 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F120-04 |
filingDate | 2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_590246d67c1479805d03ab49982270a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8ec052ee1874b29922ad2f780cb90ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0ccdf0dcde1fdc69e605ab904d4c47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53c235ad46fd11eea4c6261ac2f385c |
publicationDate | 2002-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20020084376-A |
titleOfInvention | Organic-inorganic hybrid material for gate insulation film of tft-lcd, gate insulation film and its preparation comprising the same |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sol-gel composite material for a gate insulating film of a TFT-LCD, and a gate insulating film including the same, and a method for manufacturing the same. In particular, as a gate insulating film for a thin film transistor of an active matrix liquid crystal display device having excellent heat resistance and dielectric properties. It relates to a sol-gel composite material that can be used. The present invention provides a polymer resin which is a copolymer of a homopolymer represented by the following Chemical Formula 1 or a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2 or Chemical Formula 3, and the polymer resin is used as a matrix. In addition, there is provided an organic-inorganic composite material in which a metal alkoxide, a metal oxide, or a sol compound thereof is dispersed, a coating composition thereof, and a method of manufacturing a gate insulating film which coats and forms the coating composition.n n n [Formula 1] [Formula 2] [Formula 3]n n n n n n n n n n In the above formula, R 1 is hydrogen or methyl group; R is a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms; M is a metal selected from the group consisting of silicon, titanium, aluminum, zirconium, and barium; R 2 is a methyl group, ethyl group, propyl group, butyl group or methylene group; R 3 is hydrogen or a methyl group; R 4 is benzene or an alkyl group having 1 to 8 carbon atoms, an aryl group having 1 to 6 carbon atoms, or a benzene substituted with halogen; n is an integer from 100 to 1000; m is an integer from 5 to 10; k is an integer from 100 to 1000.n n n According to the present invention, a polymer matrix having excellent processability, heat resistance, and adhesion is provided, and further, the metal alkoxide, metal oxide particles, or sol compound thereof exhibits excellent physical properties in coating property, heat resistance, hardness, and permeability. By providing a gate insulating film of an amorphous thin film transistor to solve the planarization problem of the gate nitride film generated in a large thin film transistor using a thick gate electrode and a short problem with the active layer generated from it can be usefully used in the production of large TFT-LCD . |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658753-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160045492-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200109024-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8039294-B2 |
priorityDate | 2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 120.