http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020081228-A
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate | 2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2002-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20020081228-A |
titleOfInvention | Semiconductor processing equipment |
abstract | A plasma processing chamber comprising a slip cast part having a surface exposed to the interior space of the chamber. The slip cast component has a free silicon contained therein and a protective layer on the surface, which prevents the silicon from being attacked by the plasma inside the chamber. Slip cast parts can be made of slip cast silicon carbide coated with CVD silicon carbide. The slip cast component may include one or more of chamber components such as wafer passage insert 21, unitary or tiled liner 20, plasma screen 22, showerhead, dielectric member, and the like. Slip cast components reduce particle contamination and reduce process drift in plasma processes such as plasma etching dielectric materials such as silicon oxide. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160038882-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100783060-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101598465-B1 |
priorityDate | 1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.