http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020074094-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33ffce755c0db3aece5677fc50c430e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75a351ec61316ef86d96606dee961977 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_730487377615b70e45fb905de3443d1f |
| publicationDate | 2002-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020074094-A |
| titleOfInvention | Manufacturing method of metal film with air gap |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a metal thin film having an air gap formed by vaporizing a polymer material, wherein SiC or SiN (barrier) is deposited on a metal, and amorphous carbon or spin is deposited thereon by PECVD. Depositing a spin-on carbon, depositing a pattern thereon, depositing and curing a porous oxide, forming a trench or via of a predetermined depth in a lithography process, and forming a plasma Etching to form a pattern, baking the formed pattern to deposit a Cu barrier, depositing Cu by electrochemical plating (ECP) on the Cu barrier, and CMPing the deposited Cu and after, O 3 or O 2 ashing process (or an etching process) to a high temperature ashing equipment (or Etcher); and ashing (or etching) to remove the polymer residue in the C- porous oxide in Eat a thin metal film production method comprising the step of depositing after the barrier (SiC, SiN) in vacuo (vacuum). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100849809-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100755076-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367234-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100714623-B1 |
| priorityDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.