http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020071349-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_812397010176c55b292bd54c2b3f9471
publicationDate 2002-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20020071349-A
titleOfInvention Semiconductor device having contact plug capable of preventing lifting-off of metal layer provided thereon and method for manufacturing the same
abstract To prevent peeling of the upper wiring layer by voids generated in the contact plugs connecting the upper wiring layer and the lower wiring layer, the voids are filled with a capping film before forming an interlayer insulating layer or an etch stop layer on the contact plugs in which the voids are formed. In a subsequent electroplating process for forming the upper wiring layer, a technique of preventing the electrolyte solution from filling in the voids is disclosed. Capping film having such a function is SiN, SiC, SiOC, SiOF, TEOS (TetraEthylOrthoSilicate), HDP (High Plasma Density) oxide film. It can consist of USG (Undoped Silicate Glass), PSG (PhosporeSilicateGlass), HSQ (Hydrogen SilsesQuioxane) material, MSQ (MethylSilsesQuioxane) material or BCB (BenzoCycloButene) material or Al, Ti, TiN, Ta, TaN, or TaSiN have.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100909176-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090090623-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100790293-B1
priorityDate 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.