| abstract |
There is provided a base polymer compound bonded with an ester group having a fluorine-containing alicyclic unit. The resist composition containing this polymer compound is sensitive to high energy rays, has excellent sensitivity at wavelengths of 200 nm or less, significantly improves transparency by the bonded fluorine-containing alicyclic unit, and has satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of an F 2 laser and is ideal as a micro-patterning material in VLSI fabrication. |