http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020065888-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2329-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-312 |
| filingDate | 2001-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020065888-A |
| titleOfInvention | Electric field emission type electron source |
| abstract | In the field emission-type electron source 10, a strong electric field including a lower electrode 8, which is a conductive layer, and a drift portion 6a, which is an oxidized or nitrided porous semiconductor, above the insulating substrate 11 made of glass. The system drift layer 6 and the surface electrode 7 which consists of a gold thin film are provided. The surface electrode 7 has a voltage applied to the lower electrode 8 to become an anode, and electrons injected from the lower electrode 8 into the strong field drift layer 6 drift the strong field drift layer 6. It is emitted to the outside through the surface electrode (7). Between the lower electrode 8 and the strong electric field drift layer 6, a pn junction semiconductor layer consisting of the n layer 21 and the p layer 22 is provided, whereby the surface electrode (from the lower electrode 8) is formed. 7) leakage current is prevented from flowing and power consumption is reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100769958-B1 |
| priorityDate | 2000-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.