| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6afe9f56961f15f71bfbcaf958faaf46 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
| filingDate |
2001-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4e7097212159c39db9cc81aa9f0142 |
| publicationDate |
2002-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020065230-A |
| titleOfInvention |
A chemical vapor deposition method for depositing copper film using hydrogen plasma and surfactant |
| abstract |
A method for increasing the formation speed of a film when forming a copper film by a chemical vapor deposition method is disclosed. When supplying a +1 valent liquid copper chemical vapor deposition raw material to form a copper film, pretreatment of the substrate with hydrogen plasma prior to the start of the chemical vapor deposition process and introduction of the iodine catalytic species are more effective than without hydrogen plasma treatment. At a high rate, a copper film is formed. |
| priorityDate |
2001-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |